philips semiconductors product specification triacs bt139x series h high noise immunity general description quick reference data glass passivated triacs in a full pack, symbol parameter max. max. max. unit plastic envelope, intended for use in applications requiring high noise bt139x- 500h 600h 800h immunity in addition to high, v drm repetitive peak off-state 500 600 800 v bidirectional blocking voltage voltages capability and thermal cycling i t(rms) rms on-state current 16 16 16 a performance. typical applications i tsm non-repetitive peak on-state 140 140 140 a include motor control, industrial current lighting, heating and static switching. pinning - sot186a pin configuration symbol pin description 1 main terminal 1 2 main terminal 2 3 gate case isolated limiting values limiting values in accordance with the absolute maximum system (iec 134). symbol parameter conditions min. max. unit -500 -600 -800 v drm repetitive peak off-state - 500 1 600 1 800 v voltages i t(rms) rms on-state current full sine wave; t hs 38 ?c - 16 a i tsm non-repetitive peak full sine wave; t j = 25 ?c prior to on-state current surge t = 20 ms - 140 a t = 16.7 ms - 150 a i 2 ti 2 t for fusing t = 10 ms - 98 a 2 s di t /dt repetitive rate of rise of i tm = 20 a; i g = 0.2 a; on-state current after di g /dt = 0.2 a/ m s triggering t2+ g+ - 50 a/ m s t2+ g- - 50 a/ m s t2- g- - 50 a/ m s t2- g+ - 10 a/ m s i gm peak gate current - 2 a v gm peak gate voltage - 5 v p gm peak gate power - 5 w p g(av) average gate power over any 20 ms period - 0.5 w t stg storage temperature -40 150 ?c t j operating junction - 125 ?c temperature t1 t2 g 12 3 case 1 although not recommended, off-state voltages up to 800v may be applied without damage, but the triac may switch to the on-state. the rate of rise of current should not exceed 15 a/ m s. september 1997 1 rev 1.200
philips semiconductors product specification triacs bt139x series h high noise immunity isolation limiting value & characteristic t hs = 25 ?c unless otherwise specified symbol parameter conditions min. typ. max. unit v isol r.m.s. isolation voltage from all f = 50-60 hz; sinusoidal - 2500 v three terminals to external waveform; heatsink r.h. 65% ; clean and dustfree c isol capacitance from t2 to external f = 1 mhz - 10 - pf heatsink thermal resistances symbol parameter conditions min. typ. max. unit r th j-hs thermal resistance full or half cycle junction to heatsink with heatsink compound - - 4.0 k/w without heatsink compound - - 5.5 k/w r th j-a thermal resistance in free air - 55 - k/w junction to ambient static characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit i gt gate trigger current v d = 12 v; i t = 0.1 a t2+ g+ 10 14 50 ma t2+ g- 10 17 50 ma t2- g- 10 18 50 ma t2- g+ 10 40 100 ma i l latching current v d = 12 v; i gt = 0.1 a t2+ g+ - 10 60 ma t2+ g- - 25 90 ma t2- g- - 12 60 ma t2- g+ - 14 90 ma i h holding current v d = 12 v; i gt = 0.1 a - 8 60 ma v t on-state voltage i t = 20 a - 1.2 1.6 v v gt gate trigger voltage v d = 12 v; i t = 0.1 a - 0.7 1.5 v v d = 400 v; i t = 0.1 a; t j = 125 ?c 0.25 0.4 - v i d off-state leakage current v d = v drm(max) ; t j = 125 ?c - 0.1 0.5 ma dynamic characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit dv d /dt critical rate of rise of v dm = 67% v drm(max) ; t j = 125 ?c; 200 500 - v/ m s off-state voltage exponential waveform; gate open circuit dv com /dt critical rate of change of v dm = 400 v; t j = 95 ?c; i t(rms) = 16 a; 10 20 - v/ m s commutating voltage di com /dt = 7.2 a/ms; gate open circuit t gt gate controlled turn-on i tm = 20 a; v d = v drm(max) ; i g = 0.1 a; - 2 - m s time di g /dt = 5 a/ m s september 1997 2 rev 1.200
philips semiconductors product specification triacs bt139x series h high noise immunity fig.1. maximum on-state dissipation, p tot , versus rms on-state current, i t(rms) , where a = conduction angle. fig.2. maximum permissible non-repetitive peak on-state current i tsm , versus pulse width t p , for sinusoidal currents, t p 20ms. fig.3. maximum permissible non-repetitive peak on-state current i tsm , versus number of cycles, for sinusoidal currents, f = 50 hz. fig.4. maximum permissible rms current i t(rms) , versus heatsink temperature t hs . fig.5. maximum permissible repetitive rms on-state current i t(rms) , versus surge duration, for sinusoidal currents, f = 50 hz; t hs 38?c. fig.6. normalised gate trigger voltage v gt (t j )/ v gt (25?c), versus junction temperature t j . 0 5 10 15 20 0 5 10 15 20 25 = 180 120 90 60 30 bt139 it(rms) / a ptot / w ths(max) / c 125 105 85 65 45 25 1 -50 0 50 100 150 0 5 10 15 20 bt139x 38 c ths / c it(rms) / a 10us 100us 1ms 10ms 100ms 10 100 1000 bt139 t / s itsm / a t i tsm time i tj initial = 25 c max t di /dt limit t t2- g+ quadrant 0.01 0.1 1 10 0 10 20 30 40 50 bt139 surge duration / s it(rms) / a 1 10 100 1000 0 50 100 150 bt139 number of cycles at 50hz itsm / a t i tsm time i tj initial = 25 c max t -50 0 50 100 150 0.4 0.6 0.8 1 1.2 1.4 1.6 bt136 tj / c vgt(tj) vgt(25 c) september 1997 3 rev 1.200
philips semiconductors product specification triacs bt139x series h high noise immunity fig.7. normalised gate trigger current i gt (t j )/ i gt (25?c), versus junction temperature t j . fig.8. normalised latching current i l (t j )/ i l (25?c), versus junction temperature t j . fig.9. normalised holding current i h (t j )/ i h (25?c), versus junction temperature t j . fig.10. typical and maximum on-state characteristic. fig.11. transient thermal impedance z th j-hs , versus pulse width t p . fig.12. typical commutation dv/dt versus junction temperature, parameter commutation di t /dt. the triac should commutate when the dv/dt is below the value on the appropriate curve for pre-commutation di t /dt. -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 bt139h tj / c igt(tj) igt(25 c) t2+ g+ t2+ g- t2- g- t2- g+ 0 0.5 1 1.5 2 2.5 3 0 10 20 30 40 50 bt139 vt / v it / a tj = 125 c tj = 25 c typ max vo = 1.195 v rs = 0.018 ohms -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 triac tj / c il(tj) il(25 c) 0.001 0.01 0.1 1 10 bt139 tp / s zth j-hs (k/w) 10us 0.1ms 1ms 10ms 0.1s 1s 10s t p p t d unidirectional bidirectional with heatsink compound without heatsink compound -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 triac tj / c ih(tj) ih(25c) 0 50 100 150 1 10 100 1000 tj / c 9.3 dv/dt (v/us) 5.6 dicom/dt = 20 a/ms 16 off-state dv/dt limit 12 7.2 bt139...h series september 1997 4 rev 1.200
philips semiconductors product specification triacs bt139x series h high noise immunity mechanical data dimensions in mm net mass: 2 g fig.13. sot186a; the seating plane is electrically isolated from all terminals. notes 1. refer to mounting instructions for f-pack envelopes. 2. epoxy meets ul94 v0 at 1/8". 10.3 max 3.2 3.0 4.6 max 2.9 max 2.8 seating plane 6.4 15.8 max 0.6 2.5 2.54 5.08 12 3 3 max. not tinned 3 0.5 2.5 0.9 0.7 m 0.4 15.8 max. 19 max. 13.5 min. recesses (2x) 2.5 0.8 max. depth 1.0 (2x) 1.3 september 1997 5 rev 1.200
philips semiconductors product specification triacs bt139x series h high noise immunity definitions data sheet status objective specification this data sheet contains target or goal specifications for product development. preliminary specification this data sheet contains preliminary data; supplementary data may be published later. product specification this data sheet contains final product specifications. limiting values limiting values are given in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of this specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the specification. philips electronics n.v. 1997 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. life support applications these products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. september 1997 6 rev 1.200
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